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DISCRETE SEMICONDUCTORS
DATA SHEET
BUT12F; BUT12AF Silicon diffused power transistors
Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. APPLICATIONS * Converters * Inverters * Switching regulators * Motor control systems.
handbook, halfpage
BUT12F; BUT12AF
PINNING PIN 1 2 3 mb base collector emitter mounting base; electrically isolated from all pins DESCRIPTION
handbook, halfpage
2 1
MBB008
3
123
MBK109
Fig.1 Simplified outline (SOT186) and symbol.
QUICK REFERENCE DATA SYMBOL VCESM BUT12F BUT12AF VCEO collector-emitter voltage BUT12F BUT12AF VCEsat ICsat collector-emitter saturation voltage collector saturation current BUT12F BUT12AF IC ICM Ptot tf collector current (DC) collector current (peak value) total power dissipation fall time see Figs 2 and 4 see Fig.2 Th 25 C; see Fig.3 resistive load; see Figs 11 and 12 6 5 8 20 23 0.8 A A A A W s see Figs 7 and 9 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 5 N force on centre of package. 2. Mounted with heatsink compound and 30 5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUT12F BUT12AF VCEO collector-emitter voltage BUT12F BUT12AF ICsat collector saturation current BUT12F BUT12AF IC ICM IB IBM Ptot Tstg Tj Note 1. Mounted without heatsink compound and 30 5 N force on centre of package. ISOLATION CHARACTERISTICS SYMBOL VisolM Cisol PARAMETER isolation voltage from all terminals to external heatsink (peak value) isolation capacitance from collector to external heatsink collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature junction temperature Th 25 C; see Fig.3; note 1 see Figs 2 and 4 see Fig.2 open base VBE = 0 CONDITIONS PARAMETER thermal resistance from junction to external heatsink note 1 note 2 thermal resistance from junction to ambient
BUT12F; BUT12AF
CONDITIONS
VALUE 5.5 3.9 55
UNIT K/W K/W K/W
MIN. - - - - - - - - - - - -65 -
MAX. 850 1000 400 450 6 5 8 20 4 6 23 +150 150 V V V V A A A A A A
UNIT
W C C
TYP. - -
MAX. 1500 12 V
UNIT pF
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VCEOsust PARAMETER CONDITIONS
BUT12F; BUT12AF
MIN. 400 450
TYP. - - - -
MAX. - - 1.5 1.5
UNIT V V V V
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 5 and 6 BUT12F BUT12AF collector-emitter saturation voltage BUT12F BUT12AF IC = 6 A; IB = 1.2 A; see Figs 7 and 9 IC = 5 A; IB = 1 A; see Figs 7 and 9 IC = 6 A; IB = 1.2 A; see Fig.7 IC = 5 A; IB = 1 A; see Fig.7 VCE = VCESMmax; VBE = 0; note 1 VCE = VCESMmax; VBE = 0; Tj = 125 C; note 1
VCEsat
- -
VBEsat
base-emitter saturation voltage BUT12F BUT12AF - - - - - 10 - - - - - 18 20 1.5 1.5 1 3 10 35 35 V V mA mA mA
ICES
collector-emitter cut-off current
IEBO hFE
emitter-base cut-off current DC current gain
VEB = 9 V; IC = 0 VCE = 5 V; IC = 1 A; see Fig.10
VCE = 5 V; IC = 10 mA; see Fig.10 10
Switching times resistive load (see Fig.12) ton turn-on time BUT12F BUT12AF ts storage time BUT12F BUT12AF tf fall time BUT12F BUT12AF Switching times inductive load (see Fig.14) ts storage time BUT12F BUT12AF tf fall time BUT12F BUT12AF Note 1. Measured with a half-sinewave voltage (curve tracer). 1997 Aug 13 3 ICon = 6 A; IBon = 1.2 A; VCL = 250 V; Tc = 100 C ICon = 5 A; IBon = 1 A; VCL = 300 V; Tc = 100 C - - 200 200 300 300 ns ns ICon = 6 A; IBon = 1.2 A; VCL = 250 V; Tc = 100 C ICon = 5 A; IBon = 1 A; VCL = 300 V; Tc = 100 C - - 1.9 1.9 2.5 2.5 s s ICon = 6 A; IBon = -IBoff = 1.2 A ICon = 5 A; IBon = -IBoff = 1 A - - - - 0.8 0.8 s s ICon = 6 A; IBon = -IBoff = 1.2 A ICon = 5 A; IBon = -IBoff = 1 A - - - - 4 4 s s ICon = 6 A; IBon = -IBoff = 1.2 A ICon = 5 A; IBon = -IBoff = 1 A - - - - 1 1 s s
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
handbook, full pagewidth
102 IC (A)
MGB935
ICM max IC max
10
II 1
I 10-1
10-2
DC
10-3
BUT12F BUT12AF
10-4 1 10
102
103
VCE (V)
104
Tmb < 25 C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
MGK674
120 handbook, halfpage Ptot max (%) 80
handbook, halfpage
10
MGB892
IC (A)
5
40 BUT12F BUT12AF
0
0 0 50 100 Th (oC) 150 0 400 800 VCE (V) 1200
VBE = -1 to -5 V; Tmb = 100 C.
Fig.3 Power derating curve.
Fig.4 Reverse bias SOAR.
handbook, halfpage
+ 50 V 100 to 200 L
I halfpage handbook,C (mA) 250 200
MGE239
horizontal oscilloscope vertical 300 1
MGE252
100
6V 30 to 60 Hz
0
VCE (V) min VCEOsust
Fig.5
Test circuit for collector-emitter sustaining voltage.
Fig.6
Oscilloscope display for collector-emitter sustaining voltage.
1997 Aug 13
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
MGB914
handbook, full pagewidth
2.0
VBEsat VCEsat (V) 1.5
1.0 (1) (2) 0.5 (3) (4) 0 10-1 IC/IB = 5. (1) VBE; Tj = 25 C. (2) VBE; Tj = 100 C. 1 (3) VCE; Tj = 100 C. (4) VCE; Tj = 25 C. 10 IC (A) 102
Fig.7 Base-emitter and collector-emitter saturation voltages as functions of base current; typical values.
handbook, full pagewidth
1.6
MGB911
VBE (V) 1.4
(1) 1.2 (2)
(3) 1.0
0.8 0 Tj = 25 C. (1) IC = 8 A. 0.5 (2) IC = 6 A. (3) IC = 3 A. 1 1.5 2 2.5 IB (A) 3
Fig.8 Base-emitter voltage as a function of collector current; typical values.
1997 Aug 13
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
handbook, halfpage
10
MGB872
102 handbook, halfpage
MBC096
(1) VCEsat (V)
(2)
(3)
hFE VCE = 5 V 1V
1
10
10-1 10-2
10-1
1
IB (A)
10
1 10-2
10-1
1
10
2 IC (A) 10
(1) IC = 3 A. (2) IC = 6 A. (3) IC = 8 A. Tj = 25 C; solid line: typical values; dotted line: maximum values.
Fig.9
Collector-emitter saturation voltage as a function of base current.
Fig.10 DC current gain; typical values.
handbook, halfpage
tr 30 ns IB on
MBB731
90% IB
handbook, halfpage
VCC
10% t IB off IC on
RL VIM 0 tp T
MGE244
RB D.U.T.
90%
IC
10% ton
VCC = 250 V; tp = 20 s; VIM = -6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. tr 20 ns.
tf ts
t
Fig.11 Test circuit resistive load.
Fig.12 Switching time waveforms with resistive load.
1997 Aug 13
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
handbook, halfpage
tr IB on
90% IB
handbook, halfpage
VCC LC
10% t
-IB off VCL D.U.T. 90% IC on
+IB -VBE
LB
MGE246
IC
10% tf t
VCL = up to 1000 V; VCC = 30 V; VBE = -1 to -5 V; LB = 1 H; LC = 200 H.
ts toff
MGE238
Fig.13 Test circuit inductive load and reverse bias SOAR.
Fig.14 Switching times waveforms with inductive load.
1997 Aug 13
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
PACKAGE OUTLINE Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 exposed tabs
BUT12F; BUT12AF
SOT186
E E1 P m A A1
q D1
D
L1 Q
L L2
b1
1
2
b e e1
3
wM c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.4 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.5 1.3 c 0.55 0.38 D 17.0 16.4 D1 7.9 7.5 E 10.2 9.6 E1 5.7 5.3 e 2.54 e1 5.08 L 14.3 13.5 L1(1) 4.8 4.0 L2 10 m 0.9 0.5 P 3.2 3.0 Q 1.4 1.2 q 4.4 4.0 w 0.4
Note 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. OUTLINE VERSION SOT186 REFERENCES IEC JEDEC TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11
1997 Aug 13
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BUT12F; BUT12AF
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Aug 13
10
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137067/00/01/pp11
Date of release: 1997 Aug 13
Document order number:
9397 750 02715

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